MGF1952A Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – Microwave Power MES FET (Leadless Ceramic Package)

June /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1952A
Microwave Power MES FET (Leadless Ceramic Package)
DESCRIPTION
The MGF1952A is designed for use in S to Ku band power
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
High gain and High P1dB
Glp=7.0dB , P1dB=17dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
GG
ORDERING INFORMATION
Tape & reel 3000pcs./reel
Fig.1
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
Symbol
Parameter
Ratings
Unit
V_GDO
Gate to drain voltage
-8
V
V_GSO
Gate to source voltage
-8
V
I_D
Drain current
240
mA
PT
Total power dissipation
600
mW
T_ch
Channel temperature
125
°C
T_stg
Storage temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
(Ta=25°C )
Test conditions
V(BR)GDO
I_DSS
V_GS(off)
P1dB
Glp
Gate to drain breakdown voltage
Saturated drain current
Gate to source cut-off voltage
Output Power at 1dB gain
Compression
Linear Power Gain
Ig=-60µA
V_GS=0V,V_DS=3V
V_DS=3V,I_D=600µA
V_DS=3V,ID=60mA
f=12GHz
V_DS=3V,ID=60mA
f=12GHz,Pin=-5dBm
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MIN.
-8
65
-0.3
15
5
Limits
TYP.
-15
120
-1.4
17
7
MAX
--
240
-3.5
--
--
Unit
V
mA
V
dBm
dB
MITSUBISHI
(1/5)
June /2004