MGF1941AL Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – Micro-X type plastic package

< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
DESCRIPTION
The MGF1941AL power MES FET is designed for use in S to Ku band
power amplifiers.
FEATURES
High gain and High P1dB
P1dB=15dBm, Glp=10 dB (Typ.) @ f=12GHz
Outline Drawing
APPLICATION
S to Ku band low noise amplifiers
Fig.1
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=3V , ID=30mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 4,000pcs/reel
RoHS COMPLIANT
MGF1941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS (Ta=25C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-5
V
VGSO
Gate to source voltage
-5
V
ID
Drain current
120
mA
PT
Total power dissipation
300
mW
Tch
Channel temperature
175
C
Tstg
Storage temperature
-65 to +150
C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
V_(BR)GDO
I_DSS
V_GS(off)
P1dB
Glp
Gate to drain breakdown voltage
Saturated drain current
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
Gs Associated gain
NFmin Minimum noise figure
(Ta=25C )
Test conditions
IG=-30A
VGS=0V,VDS=3V
VDS=3V,ID=300A
VDS=3V, ID=30mA,
f=12GHz
VDS=3V, ID=30mA,
f=12GHz, Pin=-5dBm
VDS=3V, ID=10mA,
f=12GHz
MIN.
-8
35
-0.3
11
7
--
--
Limits
TYP.
-15
60
-1.4
15
10
9
1.2
MAX
--
120
-3.5
--
--
--
--
Unit
V
mA
V
dBm
dB
dB
dB
Note : P1B and Glp are tested with sampling inspection.
Gs/NFmin are not tested.
Publication Date : Mar., 2012
CSTG-14554
1