MGF1801B_1 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – MICROWAVE POWER GaAs FET

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
FEATURES
• High output power at 1dB gain compression
P1dB=23dBm(TYP.)
@f=8GHz
• High linear power gain
GLP=9dB(TYP.)
@f=8GHz
• High reliability and stability
APPLICATION
S to X band medium-power amplifiers and oscillators.
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=6V
• ID=100mA
• Refer to Bias Procedure
OUTLINE DRAWING
4MIN.
2
GD-10
Unit:millimeters
4MIN.
1
0.5±0.15
2
0.5±0.15
3
2.5±0.2
1 GATE
2 SOURCE
3 _DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
VGDO
VGSO
ID
IGR
IGF
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Ratings
Unit
-8
V
-8
V
250
mA
-0.6
mA
1.5
mA
PT
Total power dissipation *1
1.2
W
Tch
Channel temperature
175
˚C
Tstg
Storage temperature
-65 to +175
˚C
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
V(BR)GDO Gate to drain breakdown voltage IG=-200µA
V(BR)GSO Gate to source breakdown voltage IG=-200µA
IGSS
Gate to source leakage current VGS=-3V,VDS=0V
IDSS
Saturated drain current
VGS=0V,VDS=3V
VGS(off) Gate source cut-off voltage
gm
Transconductance
VDS=3V,ID=100µA
VDS=3V,ID=100mA
GLP
Linear power gain
VDS=6V,ID=100mA,f=8GHz
P1dB
Output power at 1dB gain
compression
VDS=6V,ID=100mA,f=8GHz
Rth(ch-c) Thermal resistance
*1:Channel to ambient
*1 ∆Vf method
Limits
Unit
Min Typ Max
-8
–
–
V
-8
–
–
V
–
–
20
µA
150 200 250 mA
-1.5
–
-4.5
V
70
90
–
mS
7
9
–
dB
21.8 23.0
–
dBm
–
–
125 ˚C/W
June/2004