MGF1601B_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package assures
minimum parasitic lasses, and has a configuration suitable for
microstrip circuits.
FEATURES
 High linear power gain
Glp=8.0dB @f=8GHz
 High P1dB
P1dB=21.8dBm(TYP.) @f=8GHz
APPLICATION
 S to X Band medium-power amplifiers and oscillators
QUALITY
 GG
RECOMMENDED BIAS CONDITION
 VDS=6V,Id=100mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
Gate to drain _{breakdown voltage}
Gate to source breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-8
-8
250
-0.6
1.5
1.2
175
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
V(BR)GDO
V(BR)GSO
IGSS
IDSS
VGS(off)
gm
GLP
P1dB
Rth(ch-c)
Gate to drain breakdown voltage
Gate to source breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Linear Power Gain
Output power at 1dB gain compression
Thermal resistance *1
Ig=200A
Ig=200A
VDS=0V,VGS=-3V
VDS=3V,VGS=0V
VDS=3V,ID=100A
VDS=3V,ID=100mA
VDS=6V,ID=100mA,f=8GHz
VDS=6V,ID=100mA,f=8GHz
ΔVf method
*1:Channel to ambient
Publication Date : Apr., 2011
1
Limits
Min.
Typ.
Max.
-8
-
-
-8
-
-
-
-
20
150
200
250
-1.5
-
-4.5
70
90
-
6
8
-
20.8
21.8
-
-
-
125
Unit
V
V
A
mA
V
mS
dB
dBm
℃/W