MGF1451A Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – Low Noise MES FET

Dec./2006
DESCRIPTION
The MGF1451A is designed for use in S to Ku band power
amplifiers.
FEATURES
High gain and High P1dB
Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
IG
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1451A
Low Noise MES FET
Outline Drawing
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
Symbol
Parameter
Ratings
Unit
V_GDO
V_GSO
Gate to drain voltage
Gate to source voltage
-8
V
-8
V
I_D
Drain current
120
mA
PT
Total power dissipation
300
mW
T_ch
Channel temperature
175
°C
T_stg
Storage temperature
-55 to +175
°C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS (Ta=25°C )
Synbol
V(BR)GDO
V(BR)GSO
IGSS
IDSS
VGS(off)
Glp
P1dB
Rt.
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Linear Power Gain
Output Power at 1dB gain
Compression
Thermal Resistance
Test conditions
IG=-30μA
IG=-30μA
VGS=-3V
VDS=0V
VGS=0V
VDS=3V
VDS=3V
ID=300μA
VDS=3V
ID=30mA
f=12GHz
--
MIN.
-8
-8
--
35
-0.3
9.0
11.0
--
Limits
TYP.
--
--
--
60
-1.4
10.5
13.0
--
MAX
--
--
10
120
-3.5
--
--
420
Unit
V
V
uA
mA
V
dB
dBm
℃/W
MITSUBISHI
(1/4)
Decl/2006