MGF0953P_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold non - matched
DESCRIPTION
The MGF0953P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
 High output power
Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
 High power gain
Gp=16.5dB(TYP.) @f=2.15GHz
 High power added efficiency
add=40%(TYP.) @f=2.15GHz,Pin=10dBm
 Plastic Mold Lead – less Package
APPLICATION
 For L/S Band power amplifiers
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=0.15A  Rg=1000
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGSO ^{Gate to source} breakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
0.4
IGR Reverse gate current
-1.25
IGF Forward gate current
5
PT
Total power dissipation
6.25
Tch Cannel temperature
150
Tstg Storage temperature
-40 to +150
Unit
V
V
A
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off)
Po *1
add *1
GLP *2
Rth(ch-c)
Gate to source cut-off voltage
Output power
Power added Efficiency
Linear Power Gain
Thermal Resistance *3
*3:Channel to case
VDS=3V,ID=0.1mA
VDS=10V,ID=0.15A,f=2.15GHz
*1:Pin=10dBm, *2:Pin=0dB
Vf Method
Fig.1
Limits
Min.
Typ.
Max.
-2
-
-5
26
28
-
-
40
-
16.5
18
-
-
14
20
Unit
V
dBm
%
dB
C/W
Publication Date : Apr., 2011
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