MGF0952P Datasheet, PDF (1/50 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0952P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0952P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
• High output power
Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm
• High power gain
Glp=13.5dB(TYP.) @f=2.15GHz
• High power added efficiency
ηadd=50%(TYP.) @f=2.15GHz,Pin=25dBm
• Plastic Mold Lead-less PKG
APPLICATION
• For L/S Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=700mA • Rg=100Ω
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
3.5
IGR Reverse gate current
-10
IGF Forward gate current
21
PT
Total power dissipation
20.0
Tch Cannel temperature
150
Tstg Storage temperature
-40 to +150
Unit
V
V
A
mA
mA
W
°C
°C
Recommended maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings Unit
Tch Cannel temperature
150
°C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
VGS(off)
Po *1
ηadd *1
GLP *2
IM3 *3
Rth(ch-c)
Gate to source cut-off voltage
Output power
Power added Efficiency
Linear Power Gain
3^rd order Modulation Distortion
Thermal Resistance *1
VDS=3V,ID=12.6mA
VDS=10V,ID=700mA,f=2.15GHz
*1:Pin=25dBm, *2:Pin=15dBm
*3:f1=2.15GHz,f2=2.16GHz
Po(SCL)=25dBm
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Min.
-1
35.0
--
11
--
--
Limits
Typ.
-3
36.5
50
13.5
-42
4.5
Max.
-5
--
--
--
--
6.5
Unit
V
dBm
%
dB
dBc
°C/W
(1/50)
Mitsubishi Electric
Mar./2005