MGF0951P_11 Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0951P
L & S BAND / 1.2W
SMD / Plastic Mold non - matched
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
 High output power
Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
 High power gain
Gp=13dB(TYP.) @f=2.15GHz
 High power added efficiency
add=50%(TYP.) @f=2.15GHz,Pin=20dBm
 Plastic Mold Lead – less Package
APPLICATION
 For L/S Band power amplifiers
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=200mA  Rg=500
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGSO ^{Gate to source} breakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
800
IGR Reverse gate current
-2.5
IGF Forward gate current
5.4
PT
Total power dissipation
6.0
Tch Cannel temperature
150
Tstg Storage temperature
-40 to +150
Unit
V
V
mA
mA
mA
W
C
C
Fig.1
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off)
gm
Po
add *1
GLP *2
IM3 *3
Rth(ch-c)
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
3rd order Modulation Distortion
Thermal Resistance *4
VDS=3V,ID=2.5mA
VDS=3V,ID=300mA
VDS=10V,ID=200mA,f=2.15GHz
*1:Pin=20dBm, *2:Pin=10dB
*3:f1=2.15GHz,f2=2.16GHz
Po(SCL)=20dBm
Vf Method
*4:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
-1
-
-5
-
200
-
29.5
31
-
-
50
-
11
13
-
-
-45
-
-
20
25
Unit
V
mS
dBm
%
dB
dBc
C/W
Publication Date : Apr., 2011
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