MGF0951P Datasheet, PDF (1/42 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET Plastic Mold Lead-less PKG

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0951P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
• High output power
Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
• High power gain
Glp=13dB(TYP.) @f=2.15GHz
• High power added efficiency
ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm
• Plastic Mold Lead-less PKG
APPLICATION
• For L/S Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=200mA • Rg=500Ω
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
800
IGR Reverse gate current
-2.5
IGF Forward gate current
5.4
PT
Total power dissipation
6.0
Tch Cannel temperature
150
Tstg Storage temperature
-40 to +150
Unit
V
V
mA
mA
mA
W
°C
°C
Recommended maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings Unit
Tch Cannel temperature
150
°C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
VGS(off)
gm
Po
ηadd *1
GLP *2
IM3 *3
Rth(ch-c)
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
3^rd order Modulation Distortion
Thermal Resistance *1
VDS=3V,ID=2.5mA
VDS=3V,ID=300mA
VDS=10V,ID=200mA,f=2.15GHz
*1:Pin=20dBm, *2:Pin=10dBm
*3:f1=2.15GHz,f2=2.16GHz
Po(SCL)=20dBm
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Min.
-1
--
29.5
--
11
--
--
Limits
Typ.
-3
200
31
50
13
-45
20
Max.
-5
--
--
--
--
--
25
Unit
V
mS
dBm
%
dB
dBc
°C/W
(1/42)
Mitsubishi Electric
Mar./2005