MGF0920A Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET [ SMD non - matched ]

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0920A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0920A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
• High power gain
Gp=18dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=45%(TYP.) @f=1.9GHz,Pin=15dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=400mA • Rg=200Ω
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings Unit
VGSO Gate to sourcebreakdown voltage
-15
V
VGDO Gate to drain breakdown voltage
-15
V
ID
Drain current
1500
mA
IGR Reverse gate current
-3.6
mA
IGF Forward gate current
15
mA
PT
Total power dissipation
8.3
W
Tch Cannel temperature
175
°C
Tstg Storage temperature
-65 to +175 °C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VGS(off) Gate to source cut-off voltage
gm
Transconductance
Po
Output power
ηadd
Power added Efficiency
GLP
Linear Power Gain
Rth(ch-c) Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=3.0 m A
VDS=3V,ID=400m A
VDS=10V,ID=400mA,f=1.9GHz
Pin=15dBm
VDS=10V,ID=400mA,f=1.9GHz
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
-
1000 1500
-1.0
-
-5.0
-
370
-
30
32
-
-
35
-
16
18
-
-
13
18
Unit
mA
V
mS
dBm
%
dB
°C/W
Mitsubishi Electric
June/2004