MGF0919A_05 Datasheet, PDF (1/12 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET [ SMD non - matched ]

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
• High power gain
Gp=19dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=300mA • Rg=500Ω
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
800
IGR Reverse gate current
-2.4
IGF Forward gate current
10
PT
Total power dissipation
6
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
°C
°C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
Po
ηadd
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=2.0mA
VDS=3V,ID=300mA
VDS=10V,ID=300mA,f=1.9GHz
Pin=12dBm
VDS=10V,ID=300mA,f=1.9GHz
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
-
600
800
-1.0
-
-5.0
-
260
-
28
30
-
-
37
-
17
19
-
-
1.2
-
-
17
25
Unit
mA
V
mS
dBm
%
dB
dB
°C/W
(1/12)
Mitsubishi Electric
Feb./2005