MGF0918A Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET [ SMD non - matched ]

Preliminary
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0918A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
· High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
· High power gain
Gp=20dB(TYP.) @f=1.9GHz
· High power added efficiency
hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm
· Hermetic Package
APPLICATION
· For UHF Band power amplifiers
QUALITY
· GG
RECOMMENDED BIAS CONDITIONS
· Vds=10V · Ids=150mA · Rg=1kW
Delivery Tape & Reel
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
400
IGR Reverse gate current
-1.2
IGF Forward gate current
5.0
PT
Total power dissipation
3
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
°C
°C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
Po
hadd
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=1.0mA
VDS=3V,ID=150mA
VDS=10V,ID=150mA,f=1.9GHz
Pin=8dBm
VDS=10V,ID=150mA,f=1.9GHz
DVf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
-
300
400
-1.0
-
-5.0
-
130
-
25
27
-
-
45
-
-
20
-
-
1.0
-
-
35
50
Unit
mA
V
mS
dBm
%
dB
dB
°C/W
Mitsubishi Electric
July 1999