MGF0917A_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0917A
L & S BAND / 0.25W
SMD non - matched
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
 High output power
Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
 High power gain
Gp=21dB(TYP.) @f=1.9GHz
 High power added efficiency
add=38%(TYP.) @f=1.9GHz,Pin=4dBm
 Hermetic Package
APPLICATION
 For UHF Band power amplifiers
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=75mA  Rg=2k
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGSO ^{Gate to sourcebreakdown} voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
200
IGR Reverse gate current
-0.6
IGF Forward gate current
2.5
PT
Total power dissipation
2
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
Po
add
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=0.5mA
VDS=3V,ID=75mA
VDS=10V,ID=75mA,f=1.9GHz
Pin=4dBm
VDS=10V,ID=75mA,f=1.9GHz
Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
Fig.1
Limits
Min.
Typ.
Max.
-
150
200
-1.0
-
-5.0
-
70
-
23
24
-
-
38
-
-
21
-
-
0.9
-
-
55
75
Unit
mA
V
mS
dBm
%
dB
dB
C/W