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MGF0915A_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage) | |||
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< High-power GaAs FET (small signal gain stage) >
MGF0915A
L & S BAND / 4.5W
SMD non - matched
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
ï· High output power
Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm
ï· High power gain
Gp=14.5dB(TYP.) @f=1.9GHz
ï· High power added efficiency
ï¨add=50%(TYP.) @f=1.9GHz,Pin=23dBm
ï· Hermetic Package
APPLICATION
ï· For UHF Band power amplifiers
QUALITY
ï· GG
RECOMMENDED BIAS CONDITIONS
ï· Vds=10V ï· Ids=800mA ï· Rg=100ï
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25ï°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
3000
IGR Reverse gate current
-10
IGF Forward gate current
21
PT
Total power dissipation
18.7
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
ï°C
ï°C
Electrical characteristics (Ta=25ï°C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
Po
ï¨add
GLP
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=10mA
VDS=3V,ID=800mA
VDS=10V,ID=800mA,f=1.9GHz
Pin=23dBm
VDS=10V,ID=800mA,f=1.9GHz
ïVf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Fig.1
Limits
Min.
Typ.
Max.
-
2400 3000
-1
-3
-5
-
1000
-
35.0
36.5
-
-
50
-
13.0
14.5
-
-
5
8
Unit
mA
V
mS
dBm
%
dB
ï°C/W
Publication Date : Apr., 2011
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