MGF0915A Datasheet, PDF (1/48 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET[ SMD non - matched ]

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0915A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm
• High power gain
Gp=14.5 dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=800 mA • Rg=100Ω
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
3000
IGR Reverse gate current
-10
IGF Forward gate current
21
PT
Total power dissipation
18.7
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
°C
°C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
Po
ηadd
GLP
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=10mA
VDS=3V,ID=800mA
VDS=10V,ID=800mA,f=1.9GHz
Pin=23dBm
VDS=10V,ID=800mA,f=1.9GHz
∆Vf Method
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
(1/48)
Limits
Min.
Typ.
Max.
-
2400 3000
-1
-3
-5
-
1000
-
35.0
36.5
-
-
50
-
13.0
14.5
-
-
5
8
Mitsubishi Electric
Unit
mA
V
mS
dBm
%
dB
°C/W
Mar./2005