MGF0913A_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0913A
L & S BAND / 1.2W
SMD non - matched
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
 High output power
Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
 High power gain
Gp=13dB(TYP.) @f=1.9GHz
 High power added efficiency
add=48%(TYP.) @f=1.9GHz,Pin=18dBm
 Hermetic Package
APPLICATION
 For UHF Band power amplifiers
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=200mA  Rg=500
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGSO ^{Gate to sourcebreakdown} voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
800
IGR Reverse gate current
-2.5
IGF Forward gate current
5.4
PT
Total power dissipation
5.0
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
Po
add
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=2.5mA
VDS=3V,ID=300mA
VDS=10V,ID=200mA,f=1.9GHz
Pin=18dBm
VDS=10V,ID=200mA,f=1.9GHz
Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Fig.1
Limits
Min.
Typ.
Max.
400
550
800
-1
-3
-5
-
200
-
29.5
31
-
-
48
-
11
13
-
-
2.0
-
-
20
30
Unit
mA
V
mS
dBm
%
dB
dB
C/W
Publication Date : Apr., 2011
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