MGF0913A Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET [ SMD non - matched ]

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0913A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0913A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm
• High power gain
Gp=13dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=48%(TYP.) @f=1.9GHz,Pin=18dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=200mA • Rg=500Ω
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings Unit
VGSO Gate to sourcebreakdown voltage
-15
V
VGDO Gate to drain breakdown voltage
-15
V
ID
Drain current
800
mA
IGR Reverse gate current
-2.5
mA
IGF Forward gate current
5.4
mA
PT
Total power dissipation
5.0
W
Tch Cannel temperature
175
°C
Tstg Storage temperature
-65 to +175 °C
Fig.1
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VGS(off) Gate to source cut-off voltage
gm
Transconductance
Po
Output power
ηadd
Power added Efficiency
GLP
Linear Power Gain
NF
Noise figure
Rth(ch-c) Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=2.5mA
VDS=3V,ID=300mA
VDS=10V,ID=200mA,f=1.9GHz
Pin=18dBm
VDS=10V,ID=200mA,f=1.9GHz
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
400
550
800
-1
-3
-5
-
200
-
29.5
31
-
-
48
-
11
13
-
-
2.0
-
-
20
30
Unit
mA
V
mS
dBm
%
dB
dB
°C/W
Mitsubishi Electric
June/2004