MGF0912A_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0912A
L & S BAND / 14W
non - matched
DESCRIPTION
The MGF0912A, GaAs FET with an N-channel schottky
gate, is designed for use in L/S band amplifiers.
FEATURES
 High output power
Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
 High power gain
Gp=10.5dB(TYP.) @f=1.9GHz
 High power added efficiency
P.A.E =38%(TYP.) @f=1.9GHz,Pin=33dBm
 Hermetic Package
APPLICATION
 For L/S Band power amplifiers
QUALITY
 GG
Delivery
 Tray
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=2.6A  Rg=50
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to drain voltage
VGSO ^{Gate to source} voltage
ID
Drain current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25C
(Ta=25C)
Ratings
-15
-15
10
-30
63
53.6
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
OUTLINE DRAWING
Unit : m illim eters
①
②
φ2.2
②
0.6±0.2
③
GF-7
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) ^{Gate to source cut-off voltage}
Po
Output power
P.A.E.
Power added efficiency
GLP
Linear Power Gain
Rth(ch-c) *3 Thermal resistance
*2 :Channel-case
*3 :Channel-ambient
VDS=3V,VGS=0V
VDS=3V,ID=2.6A
VDS=3V,ID=20mA
VDS=10V,ID(RF off)=2.6A
f=1.9GHz,Pin=33dBm
VDS=10V,ID(RF off)=2.6A,=1.9GHz
ΔVf method
Min.
-
-
-2
40.5
-
9.5
-
Limits
Typ.
-
3
-
41.5
38
10.5
-
Max.
10
-
-5
-
-
-
100
Unit
A
S
V
dBm
%
dB
C/W
Publication Date : Apr., 2011
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