MGF0912A Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – L & S BAND GaAs FET

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0912A
L & S BAND GaAs FET [ non – matched ]
DESCRIPTION
The MGF0912A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
• High output power
Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
• High power gain
Gp=10.5dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm
• Hermetic Package
APPLICATION
• For L/S Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=2.6A • Rg=50Ω
Delivery Tray
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
10
IGR Reverse gate current
-30
IGF Forward gate current
63
PT
Total power dissipation
53.6
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
A
mA
mA
W
°C
°C
OUTLINE DRAWING
Unit : millimeters
GF-7
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
Po
ηadd
GLP
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Thermal Resistance *1
VDS=3V,VGS=0V
VDS=3V,ID=20m A
VDS=3V,ID=2.6A
VDS=10V,ID=2.6A,f=1.9GHz
Pin=33dBm
VDS=10V,ID=2.6A,f=1.9GHz
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
-
--
10
-2.0
-
-5.0
-
3
-
40.5
41.5
-
-
38
-
9.5
10.5
-
-
2.3
3
Unit
A
V
S
dBm
%
dB
°C/W
Mitsubishi Electric
June/2004