MGF0911A_1 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – L, S BAND POWER GaAs FET

MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉
MGF0911A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
• Class A operation
• High output power
P1dB=41dBm(TYP)
@2.3GHz
• High power gain
GLP=11dB(TYP)
@2.3GHz
• High power added efficiency
ηadd=40%(TYP)
@2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
UHF band power amplifiers
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=10V
• ID=2.6A
• Rg=50Ω
• Refer to Bias Procedure
OUTLINE DRAWING
17.5
1
1.0
Unit:millimeters
2
3
14.3
9.4
2-R1.25
2
GF-21
10.0
1 GATE
2 SOURCE(FLANGE)
3 _DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
VGDO
VGSO
Gate to drain voltage
Gate to source voltage
-15
V
-15
V
ID
Drain current
10
A
IGR
Reverse gate current
30
mA
IGF
Forward gate current
63
mA
PT
Total power dissipation *1
37.5
W
Tch
Tstg
*1:TC=25˚C
Channel temperature
Storage temperature
175
˚C
-65 to +175
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
IDSS
Saturated drain current
gm
Transconductance
VDS=3V,VGS=0V
VDS=3V,ID=2.6A
VGS(off) Gate to source cut-off voltage VDS=3V,ID=20mA Test conditions
P1dB
GLP
Output power at 1dB gain
compression
Linear power gain
VDS=10V,ID
*2
ηadd
Power added efficiency at P1dB
Rth(ch-c) Thermal resistance
*1 ∆Vf method
*1:Channel to case *2:Pin=25dBm
2.6A,f=2.3GHz
Limits
Unit
Min Typ Max
–
–
10
A
–
3.0
–
S
-2
–
-5
V
40
41
–
dBm
10
11
–
dB
–
40
–
%
–
–
4.0 ˚C/W
Mitsubishi Electric
June/2004