MGF0910A Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – L, S BAND POWER GaAs FET

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0910A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0910A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
• Class A operation
• High output power
P1dB=38dBm(TYP)
@2.3GHz
• High power gain
GLP=11dB(TYP)
@2.3GHz
• High power added efficiency
ηadd=45%(TYP)
@2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
UHF band power amplifiers
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=10V
• ID=1.3A
• Rg=100Ω
• Refer to Bias Procedure
OUTLINE DRAWING
17.5
1
1.0
Unit:millimeters
2
3
14.3
9.4
2-R1.25
2
GF-21
10.0
1 GATE
2 SOURCE(FLANGE)
3 DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
VGDO
VGSO
ID
Gate to drain voltage
Gate to source voltage
Drain current
-15
V
-15
V
5
A
IGR
Reverse gate current
15
mA
IGF
Forward gate current
31.5
mA
PT
Total power dissipation *1
27.3
W
Tch
Channel temperature
175
˚C
Tstg
Storage temperature
*1:TC=25˚C
-65 to +175
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VDS=3V,VGS=0V
VDS=3V,ID=1.3A
VGS(off) Gate to source cut-off voltage VDS=3V,ID=10mA
P1dB
GLP
Output power at 1dB gain
compression
Linear power gain
VDS=10V,ID 1.3A,f=2.3GHz
*2
ηadd
Power added efficiency at P1dB
Rth(ch-c) Thermal resistance
*1 ∆Vf method
*1:Channel to case *2:Pin=22dBm
Limits
Unit
Min Typ Max
–
–
5.0
A
–
1.5
–
S
-2
–
-5
V
37
38
–
dBm
10
11
–
dB
–
45
–
%
–
–
5.5 ˚C/W
Nov. ´97