MGF0909A_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET(small signal gain stage)

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MGF0909A
L & S BAND / 6W
non - matched
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
 High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
 High power gain
GLp=11.0dB(TYP.) @f=2.3GHz
 High power added efficiency
add=45%(TYP.) @f=2.3GHz,P1dB
 Hermetic Package
APPLICATION
 For L/S Band power amplifiers
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=1.3A  Rg=100
OUTLINE DRAWING
Unit : m illim eters
①
②
φ2.2
②
0.6±0.2
③
5.0
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGSO ^{Gate to sourcebreakdown} voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
5
IGR Reverse gate current
-15
IGF Forward gate current
31.5
PT
Total power dissipation
27.3
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
GF-7
9.0±0.2
14.0
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
P1dB
add
GLP
Rth(ch-c)
Saturated drain current
VDS=3V,VGS=0V
Gate to source cut-off voltage
VDS=3V,ID=10mA
Transconductance
VDS=3V,ID=1.3A
Output power 1dB Compression P VDS=10V,ID=1.3A,f=2.3GHz
Power added Efficiency
*1 *1:Po=P1dB
Linear Power Gain
*2 *2:Pi=22dBm
Thermal Resistance *1
Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
-
--
5.0
-2.0
-
-5.0
-
1.5
-
37.0
38.0
-
-
45
-
10.0
11.0
-
-
-
9
Unit
A
V
S
dBm
%
dB
C/W
Publication Date : Apr., 2011
1