MGF0909A_1 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – L,S BAND POWER GaAs FET

DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
• High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
• High power gain
GLp=11.0dB(TYP.) @f=2.3GHz
• High power added efficiency
ηadd=45%(TYP.) @f=2.3GHz,P1dB
• Hermetic Package
APPLICATION
• For L/S Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=1.3A • Rg=100Ω
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non – matched ]
OUTLINE DRAWING
Unit : millimeters
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGSO Gate to sourcebreakdown voltage
-15
VGDO Gate to drain breakdown voltage
-15
ID
Drain current
5
IGR Reverse gate current
-15
IGF Forward gate current
31.5
PT
Total power dissipation
27.3
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
Unit
V
V
A
mA
mA
W
°C
°C
GF-7
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Electrical characteristics (Ta=25°C)
Symbol
Parameter
Test conditions
IDSS
VGS(off)
gm
P1dB
ηadd
GLP
Rth(ch-c)
Saturated drain current
VDS=3V,VGS=0V
Gate to source cut-off voltage
VDS=3V,ID=10m A
Transconductance
VDS=3V,ID=1.3A
Output power 1dB Compression P VDS=10V,ID=1.3A,f=2.3GHz
Power added Efficiency
*1 *1:Po=P1dB
Linear Power Gain
*2 *2:Pi=22dBm
Thermal Resistance *1
∆Vf Method
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Limits
Min.
Typ.
Max.
-
--
5.0
-2.0
-
-5.0
-
1.5
-
37.0
38.0
-
-
45
-
10.0
11.0
-
-
-
9
Unit
A
V
S
dBm
%
dB
°C/W
Mitsubishi Electric
June/2004