MGF0909A Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – L,S BAND POWER GaAs FET

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
• High output power
P1dB=38dBm(TYP.)
• High power gain
GLP=11dB(TYP.)
• High power added efficiency
ηadd=45%(TYP.)
@f=2.3GHz
@f=2.3GHz,Pin=20dBm
@f=2.3GHz,P1dB=20dBm
APPLICATION
For UHF Band power amplifiers
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=10V
• ID=1.3A
• Rg=100Ω
• Refer to Bias Procedure
OUTLINE DRAWING
1
Unit:millimeters
2
ø2.2
2
0.6±0.2
3
5.0
GF-7
9.0±0.2
14.0
1 GATE
2 SOURCE
3 DRAIN
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
Parameter
Ratings
Unit
VGSO
VGDO
ID
Gate to source voltage
Gate to drain voltage
Drain current
-15
V
-15
V
5.0
A
IGR
Reverse gate current
15
mA
IGF
Forward gate current
31.5
mA
PT
Total power dissipation *1
27.3
W
Tch
Channel temperature
175
˚C
Tstg
Storage temperature
*1:TC=25˚C
-65 to +175
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
Test conditions
IDSS
VGs(off)
Saturated drain current
Gate to source cut-off voltage
VDS=3V,VGS=0V
VDS=3V,ID=10mA
gm
Transconductance
VDS=3V,ID=1.3A
P1dB
Output power
GLP
Linear power gain
*2 VDS=10V,ID=1.3A,f=2.3GHz
ηadd
Power added efficiency at P1dB
Rth(ch-c) Thermal resistance
*1:Channel to case *2:Pin=22dBm
*1 ∆Vf method
Limits
Unit
Min Typ Max
–
–
5
A
-2
–
-5
V
–
1.5
–
S
37
38
–
dBm
10
11
–
dB
–
45
–
%
–
–
5.5 ˚C/W
Nov. ´97