MGF0907B_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0907B
L & S BAND / 10W
non - matched
DESCRIPTION
The MGF0907B, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
 Class A operation
 High output power
P1dB=40.0dBm(TYP.) @f=2.3GHz
 High power gain
GLP=10.0dB(TYP.) @f=2.3GHz
 High power added efficiency
P.A.E =37%(TYP.) @f=2.3GHz,P1dB
 Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
 For UHF Band power amplifiers
QUALITY
 IG
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=2.4A  Rg=50 Refer to Bias Procedure
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to drain voltage
VGSO ^{Gate to source} voltage
ID
Drain current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25C
(Ta=25C)
Ratings
-15
-15
6
-20
42
37.5
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) ^{Gate to source cut-off voltage}
P1dB
Output power at 1dB gain compression
GLP
Linear Power Gain
ID
Drain current
P.A.E.
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 :Channel-case
VDS=3V,VGS=0V
VDS=3V,ID=2.2A
VDS=3V,ID=20mA
VDS=10V,ID(RF off)=2.4A
f=2.3GHz
ΔVf method
Min.
-
-
-1
38.5
8
-
-
-
Limits
Typ.
4
2
-2.5
40
10
2.2
37
-
Max.
6
-
-4
-
-
3.0
-
4.0
Unit
A
S
V
dBm
dB
A
%
C/W
Publication Date : Apr., 2011
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