MGF0905A_11 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

< High-power GaAs FET (small signal gain stage)>
MGF0905A
L & S BAND / 2.5W
non - matched
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
 High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
 High power gain
Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
 High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm
APPLICATION
 For UHF Band power amplifiers
QUALITY
 GG
OUTLINE DRAWING
Unit : m illim eters
①
②
φ2.2
②
0.6±0.2
③
RECOMMENDED BIAS CONDITIONS
 Vds=8V  Ids=800mA  Rg=100 Refer to Bias Procedure
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to drain voltage
VGSO ^{Gate to source} voltage
ID
Drain current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25C
(Ta=25C)
Ratings
-17
-17
3200
-10
21.5
12
175
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
gm
Transconductance
VGS(off) ^{Gate to source cut-off voltage}
Po
Output power
P.A.E.
Power added efficiency
Rth(ch-c) *2 Thermal resistance
Rth(ch-a) *3 Thermal resistance
*2 :Channel-case
*3 :Channel-ambient
VDS=3V,VGS=0V
VDS=3V,ID=800mA
VDS=3V,ID=10mA
VDS=8V,ID(RF off)=800mA
f=1.65GHz,Pin=26dBm
ΔVf method
ΔVf method
GF-7
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Min.
1600
500
-1
33
-
-
-
Limits
Typ.
2400
800
-3
34
40
-
-
Max.
3200
-
-5
-
-
12.5
72.5
Unit
mA
mS
V
dBm
%
C/W
C/W
Publication Date : Apr., 2011
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