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MGF0846G Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaN HEMT (small signal gain stage) | |||
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PRELIMINARY
< High-power GaN HEMT (small signal gain stage) >
MGF0846G
L to C BAND / 40W
non - matched
DESCRIPTION
The MGF0846G, GaN HEMT with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
ï· High voltage operation
VDS=47V
ï· High output power
Po=46.5dBm(TYP.) @f=2.6GHz,P3dB
ï· High efficiency
ï¨d=60%(TYP.) @f=2.6GHz,P3dB
ï· Designed for use in Class AB linear amplifiers
APPLICATION
ï· MMDS/UMTS/WiMAX
QUALITY
ï· GG
Packaging
ï· 4 inch Tray (25 pcs)
RECOMMENDED BIAS CONDITIONS
ï· Vds=47V ï· Ids=340mA ï· Rg=30ï
Absolute maximum ratings
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to source voltage
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25ï°C
(Ta=25ï°C)
Ratings
120
-10
-6
120
64
230
-65 to +175
Unit
V
V
mA
mA
W
ï°C
ï°C
OUTLINE DRAWING
Unit : m illim eters
â
â¡
Ï2.2
â¡
0.6±0.2
â¢
GF-7
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Electrical characteristics (Ta=25ï°C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
VDS=47V,ID=12mA
P3dB
3dB gain compression power
VDS=47V,ID(RF off)=340mA
ï¨d
Drain efficiency
f=2.6GHz
GLP *2
Linear power gain
*2 : Pin=20dBm
Rth(ch-c) *3 Thermal resistance
ÎVf method
*3 :Channel-case
Specification are subject to change without notice.
Min.
-1
45.5
-
12
-
Limits
Typ.
-
46.5
60
13
2.5
Max.
-5
-
-
-
3.2
Unit
V
dBm
%
dB
ï°C/W
Note
DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Taâ§80ï°C)
ï· Bias conditions
Vds=47V , Ids=340mA
ï· Time
10hrs
Publication Date : May., 2011
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