MGF0840G Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – High-power GaN HEMT (small signal gain stage)

PRELIMINARY
< High-power GaN HEMT (small signal gain stage) >
MGF0840G
L to C BAND / 10W
non - matched
DESCRIPTION
The MGF0840G, GaN HEMT with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
 High voltage operation
VDS=47V
 High output power
Po=40.5dBm(TYP.) @f=2.6GHz,P3dB
 High efficiency
d=60%(TYP.) @f=2.6GHz,P3dB
 Designed for use in Class AB linear amplifiers
APPLICATION
 MMDS/UMTS/WiMAX
QUALITY
 GG
Packaging
 4 inch Tray (25 pcs)
RECOMMENDED BIAS CONDITIONS
 Vds=47V  Ids=90mA  Rg=120
Absolute maximum ratings
Symbol
Parameter
VDS Drain to Source Voltage
VGS ^{Gate to source} voltage
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25C
(Ta=25C)
Ratings
120
-10
-1.5
30
21
230
-65 to +175
Unit
V
V
mA
mA
W
C
C
OUTLINE DRAWING
Unit : m illim eters
①
②
φ2.2
②
0.6±0.2
③
GF-7
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off) ^{Gate to source cut-off voltage}
VDS=47V,ID=3mA
P3dB
3dB gain compression power
VDS=47V,ID(RF off)=90mA
d
Drain efficiency
f=2.6GHz
GLP *2
Linear power gain
*2 : Pin=20dBm
Rth(ch-c) *3 Thermal resistance
ΔVf method
*3 :Channel-case
Specification are subject to change without notice.
Min.
-1
39.5
-
14
-
Limits
Typ.
-
40.5
60
15
6.8
Max.
-5
-
-
-
9.8
Unit
V
dBm
%
dB
C/W
Note
DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Ta≧80C)
 Bias conditions
Vds=47V , Ids=90mA
 Time
10hrs
Publication Date : May., 2011
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