MGF0805A_11 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0805A
L & S BAND / 4.5W
SMD non - matched
DESCRIPTION
The MGF0805A, GaAs FET with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
 High output power
Po=36.5dBm(TYP.)
 High power added efficiency
P.A.E =50%(TYP.)
 Hermetic package
 Designed for use in Class AB linear amplifiers
APPLICATION
 L/S band power amplifiers
QUALITY
 GG
Packaging
 Tape & Reel (1000 pcs)
RECOMMENDED BIAS CONDITIONS
 Vds=10V  Ids=400mA  Rg=100
Absolute maximum ratings
Symbol
Parameter
VDS Drain to source voltage
VGS ^{Gate to source} voltage
ID
Drain current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25C
(Ta=25C)
Ratings
15
-5
2.5
-10
21
21
175
-55 to +150
Unit
V
V
A
mA
mA
W
C
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS=3V,VGS=0V
gm
Transconductance
VDS=3V,ID=400mA
VGS(off) ^{Gate to source cut-off voltage}
VDS=3V,ID=10mA
Po
Output power
VDS=10V,ID(RF off)=400mA
P.A.E.
Power added efficiency
f=1.9GHz,Pin=22dBm
GLP
Linear power gain
VDS=10V,ID(RF off)=400mA,f=1.9GHz
Rth(ch-c) *2 Thermal resistance
ΔVf method
*2 :Channel-case
Specifications are subject to change without notice.
Min.
-
-
-0.5
35
-
13
-
Limits
Typ.
1800
1000
-1.1
36.5
50
14.5
5
Max.
-
-
-2
-
-
-
7
Unit
mA
mS
V
dBm
%
dB
C/W
Publication Date : Apr., 2011
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