MGF0805A Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – L & S Band GaAs FET [ SMD non-matched ]

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
DESCRIPTION
The MGF0805A, GaAs FET with an N-channel schottky
Gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
• High output power : Po = 36.5 dBm (typ.)
• High power added efficiency : ηadd = 50 % (typ.)
• Hermetic package
• Designed for use in Class AB linear amplifiers
APPLICATIONS
• L/S band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds = 10 V • Ids = 400 mA • Rg = 100 Ω
Packaging Tape & Reel (1000 pcs)
Gate Mark
Round Corner
Absolute maximum ratings (Ta = 25° C)
Symbol
Parameter
Ratings
VDS
VGS
ID
PT
IGR
IGF
Tch
Tstg
Drain to Source Voltage
Gate to Source Voltage
Drain current
Total power dissipation
Reverse gate current
Forward gate current
Channel temperature
Storage temperature
15
-5
2.5
21
- 10
21
175
- 55 to +150
Unit
V
V
A
W
mA
mA
°C
°C
4.0 mm
Package Outline
(GF-50 Style)
Electrical characteristics ( Ta = 25° C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
VGS(off)
gm
Po
ηadd
GLP
Rth(ch-c)
Saturated drain current
Gate to source cut-off
voltage
Transconductance
Output power
Power added efficiency
Linear power gain
Thermal resistance *1
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 10 mA
VDS = 10 V, IDS = 400 mA
VDS = 10 V, IDQ = 400 mA,
f = 1.9 GHz, Pin = 22 dBm
VDS=10V, IDQ=400mA, f=1.9GHz
∆Vf Method
–
- 0.5
–
35.0
–
13.0
–
1800
- 1.1
1000
36.5
50
14.5
5
–
- 2.0
–
–
–
–
7
mA
V
mS
dBm
%
dB
°C/W
*1 : Channel to case
Specifications are subject to change without notice.
1
Mitsubishi Electric Sept. / 2009