MA1113-1 Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – For PCS - 20W Power Amplifier

MA1113-1
For PCS - 20W Power Amplifier
DESCRIPTION
OUTLINE DRAWING
The MA1113-1 is a 20W power amplifier
designed for PCS, which comprises 4 stages
GaAs FET and 2 stages Si bipolar transistors,
also RF power monitoring circuit.
148 mm
142 mm
3 mm
FEATURES
sSpecified +25/+10 Volt Chracteristics
• RF Output Power : +43 dBm (typ.)
• Harmonics : –65 dBc typ.
sSmall Size : 77 × 148 × 40 mm³
s50 Ohm Input/Output Impedances
APPLICATION
sPCS (1930 ~ 1990 MHz)
Base station
MA1113-1
71
77
mm
mm
3
mm
4 HOLES
φ 3.5 mm
Vg(–6V:PIN#12)
Vdet(PIN#13)
GND(PIN#11)
(out)
10 mm
RF IN
25 PINs D-SUB
40
mm
RF OUT
Vd(+10V:PIN#24) Vc(+25V:PIN#25)
MA1113-1
2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω)
No.
Items
Symbol
Condition
1 Frequency
f
2 Output Power
Pout
3 Output RF modulation – – – Pout = +43 dBm
spectrum ; from
the carrier 100 KHz
200 KHz
(Pin control)
250 KHz
400 KHz
600 KHz
to < 1200 KHz
1200 KHz
to < 1800 KHz
1800 KHz
to < 6000 KHz
=> ^{6000 KHz}
4 Spurious ; in-band
out-band
5 Harmonics
2fo Pout = +43 dBm
3fo
4fo
6 Quiescent current
Icq Pin = 0mW
Standard
Min Type Max
1930 – – – 1990
+43 – – – – – –
Unit
MHz
dBm
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–––
–––
–60
–65
–70
–––
+0.5
–30
–33
–60
–70
–73
–75
–80
–36
–30
–––
–––
–––
1.5
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBc
dBc
dBc
A
Amplifier Specifications (MA1113-1)
1. Maximum Ratings
No.
Items
1 Case temperature
2 Storage temperature
3 Collector Voltage
4 Drain Voltage
5 Gate Voltage
6 RF Input Power
Symbol
TC
Tstg
VC
Vd
Vg
Pin
Condition
Vg = –6V
Vd = +10V
Standard
–40 ~ +70
–40 ~ +80
+26.0
+11.5
–10.0
–9.0
Unit
°C
°C
V
V
V
dBm
– 96 –
– 97 –