M81721FP Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – 600V HIGH VOLTAGE HALF BRIDGE DRIVER

MITSUBISHI SEMICONDUCTORS <HVIC>
M81721FP
600V HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81721FP is high voltage Power MOSFET and IGBT gate
driver for half bridge applications.
FEATURES
¡Floating supply voltage up to 600V
¡Low quiescent power supply current
¡Separate sink and source current output up to ±1A (typ)
¡Active Miller effect clamp NMOS with sink current up to –1A (typ)
¡Input noise filters
¡Over-current detection and output shutdown
¡High side under voltage lockout
¡FO pin which can input and output Fault signals to commu-
nicate with controllers and synchronize the shut down with
other phases
¡24-Lead SSOP PACKAGE
PIN CONFIGURATION (TOP VIEW)
NC
NC
VB
HPOUT
HNOUT1
HNOUT2
VS
NC
NC
NC
NC
NC
NC
HIN
LIN
FO_RST
CIN
GND
FO
VCC
LPOUT
LNOUT1
LNOUT2
VNO
APPLICATIONS
Power MOSFET and IGBT gate driver for Medium and Mi-
cro inverter or general purpose.
Outline: 24P2Q
BLOCK DIAGRAM
GND
UV
Logic
Filter
HIN
LIN
CIN
+
Vref _–
FO_RST
Interlock
& Noise Filter
Pulse
Generator
Protection
Logic
Filter
VCC Vreg
VREG ^Vref
Filter
VB
HPOUT
HNOUT1
HNOUT2
VS
VCC
LPOUT
LNOUT1
LNOUT2
VNO
FO
Aug. 2009
1