M68761 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO

MITSUBISHI RF POWER MODULE
M68761
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
OUTLINE DRAWING
42
37
30
2-R1.5
Dimensions in mm
BLOCK DIAGRAM
2
3
4
1
5
6
9.6
14.7
19.7
27.4
32.4
PIN:
1 Pin : RF INPUT
2 VDD1: 1st DRAIN BIAS SUPPLY
3 VGG : GATE BIAS SUPPLY
4 VDD2: 2nd DRAIN BIAS SUPPLY
5 PO : RF OUTPUT
6 GND: FIN
H15
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
Parameter
VDD
Supply voltage
VGG
Gate bias voltage
Pin
Input power
PO
Output power
TC (OP) Operation case temperature
Tstg
Storage temperature
Note. Above parameters are guaranteed independently.
Conditions
ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Test conditions
f
Frequency range
PO
Output power
VDD=12.5V, VGG=3.5V, Pin=1mW,
ZG=ZL=50Ω
2fO
2nd. harmonic
ρin
Input VSWR
ηT
Total efficiency
PO=6W(VGG=Adjust), VDD=12.5V,
Pin=1mW(CW), ZG=ZL=50Ω
Stability
ZG=ZL=50Ω, VDD=10-16V,
Load VSWR <4:1
Load VSWR tolerance
VDD=15.2V, Pin=1mW,
PO=6W (VGG Adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are subject to change.
Ratings
Unit
17
V
4
V
10
mW
10
W
-30 to +100
°C
-40 to +100
°C
Limits
Min
Max
820
851
6
-30
4
33
No parasitic oscillation
No degradation or
destroy
Unit
MHz
W
dBc
%
Nov. ´97