M68757L Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO

MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2
26.6±0.2
21.2±0.2
1
2
3
0.45
6±1
13.7±1
18.8±1
23.9±1
5
4
Dimensions in mm
BLOCK DIAGRAM
2-R1.5±0.1
2
3
1
4
5
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
Parameter
VDD
Supply voltage
VGG
Gate bias voltage
Pin
Input power
PO
Output power
TC (OP) Operation case temperature
Tstg
Storage temperature
Note. Above parameters are guaranteed independently.
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Test conditions
f
Frequency range
PO
Output power
ηT
Total efficiency
2fO
2nd. harmonic
ρin
Input VSWR
VDD=7.2V, VGG=3.5V, Pin=50mW
Stability
ZG=ZL=50Ω, VDD=5-9.2V,
Load VSWR <4:1
Load VSWR tolerance
VDD=9V, Pin=50mW,
PO=3W (VGG Adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are subject to change.
Ratings
Unit
9.2
V
4
V
70
mW
5
W
-30 to +100
°C
-40 to +100
°C
Limits
Min
Max
806
870
3
30
-28
4
No parasitic oscillation
No degradation or
destroy
Unit
MHz
W
%
dBc
Nov. ´97