M68701 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO

MITSUBISHI RF POWER MODULE
M68701
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
OUTLINE DRAWING
Dimensions in mm
BLOCK DIAGRAM
60.5±1
57.5±0.5
50.4±1
2-R1.6+0.02
1
2
3
0.45±0.2
8.3±1
21.3±1
43.3±1
51.3±1
45
2
1
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
3
4
5
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
Parameter
VDD
Supply voltage
VGG
Gate bias voltage
Pin
Input power
PO
Output power
TC (OP) Operation case temperature
Tstg
Storage temperature
Note. Above parameters are guaranteed independently.
Conditions
VGG≤3.5V, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Test conditions
f
PO
ηT
2fO
ρin
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Stability
VDD=12.5V,
VGG=5V,
Pin=1mW
ZG=ZL=50Ω, VDD=10-16V,
Load VSWR<4:1
-
Load VSWR tolerance
VDD=15.2V, Pin=1mW,
PO=6W (VGG adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are subject to change.
Ratings
Unit
17
V
5.5
V
10
mW
10
W
-30 to +100
°C
-40 to +100
°C
Limits
Min
Max
820
851
6
35
-30
4
No parasitic oscillation
No degradation or
destroy
Unit
MHz
W
%
dBc
-
-
-
Nov. ´97