M67766C Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 806-825MHz, 12.5V, 16W, DIGITAL MOBILE RADIO

MITSUBISHI RF POWER MODULE
M67766C
806-825MHz, 12.5V, 16W, DIGITAL MOBILE RADIO
OUTLINE DRAWING
66±1
60±1
51.5±0.5
Dimensions in mm
4
2
12 3
4
12±1
16.5±1
24.5±1
33±1
43.5±1
55.5±1
R1.5
2-R2±0.3
5
6
7
φ 0.45
±0.2
BLOCK DIAGRAM
3
5
1
6
7
2
4
PIN:
1 Pin : RF INPUT
2 VBB1 : 1st. BASE BIAS SUPPLY
3 VCC1: 1st. COLLECTOR BIAS SUPPLY
4 VBB2 : 2nd. BASE BIAS SUPPLY
5 VCC2: 2nd. COLLECTOR BIAS SUPPLY
6 PO : RF OUTPUT
7 GND: FIN
H3
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
Parameter
VCC1
Supply voltage
VCC2
Supply voltage
VBB1
Supply voltage
VBB2
Supply voltage
ICC
Total current
Pin (max) Input power
PO (max) Output power
TC (OP) Operation case temperature
Tstg
Strage temperature
Note. Above parameters are guaranteed independently.
Conditions
ZG=ZL=50Ω, VBB1=8V
ZG=ZL=50Ω, VBB2=8V
ZG=ZL=50Ω, VCC1=8V
ZG=ZL=50Ω, VCC2=12.5V
ZG=ZL=50Ω
ZG=ZL=50Ω, VCC2=12.5V
ZG=ZL=50Ω, VCC2=12.5V
ZG=ZL=50Ω
Ratings
9
17
9
9
3
10
20
-30 to +110
-40 to +110
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Symbol
f
PO
Parameter
Frequency range
Output power
Test conditions
VCC1=VBB=8V, VCC2=12.5V,
Pin=10dBm, ZG=ZL=50Ω
Limits
Min
Max
806
825
16
ηT
2fO
ρin
IMD3
IMD5
Total efficiency
2nd. harmonic
Input VSWR
3rd. internal modulation
5th. internal modulation
VCC1=VBB=8V, VCC2=12.5V,
ZG=ZL=50Ω,
PO=6W (Pin:controlled)
20
-30
2.5
VCC1=VBB=8V, VCC2=12.5V, ZG=ZL=50Ω,
-24
PO(AVE)=6W(Pin:controlled), 2tone, ∆f=10kHz
-28
-
Load VSWR tolerance
VCC1=8.5V, VBB=8V, VCC2=17V,
PO=20W (Pin:controlled), ZG=50Ω,
Load VSWR< 2:1
No degradation or
destroy
Note. Above parameters, ratings, limits and test conditions are subject to change.
Unit
V
V
V
V
A
mW
W
°C
°C
Unit
MHz
W
%
dBc
-
dBc
dBc
-
Nov. ´97