M63850P Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63850P/FP
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63850P/FP is a inverter input power DMOS transistor
array that consists of 4 independent output N-channel
DMOS transistors.
FEATURES
4 circuits of N-channels DMOS
High breakdown voltage (VDS ≥ 80V)
High-current driving (IDS(max) = 1.5A)
With clamping diodes
Drain-source on-state low resistance
(RON = 0.72Ω, @ = 1.25A)
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps)
PIN CONFIGURATION
COM 1
O1← 2
IN1→ 3
GND

4
5
IN2→ 6
NC 7
O2← 8
16 →O4
15 ←IN4
14 VDD
13
12

GND
11 ←IN3
10 →O3
9 COM
NC : No connection
Package type 16P4(P)
16P2N(FP)
CIRCUIT DIAGRAM
VDD
INPUT
30k
4.2k
COM
OUTPUT
FUNCTION
The M63850P/FP is consists of 4 independent N-channel
DMOS transistors. Each DMOS transistor is connected in a
common-source with GND PIN. The clamp diodes for spike
killers are connected between the output pin and the COM
pin of each DMOS transistor. The maximum of Drain current
is 1.5A. The maximum Drain-Source voltage is 80V.
GND
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VDD
VDS
IDS
VI
VR
IF
Pd
Topr
Tstg
Parameter
Supply voltage
Drain-source voltage
Drain current
Input voltage
Clamping diode reverse voltage
Clamping diode forward current
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
7
–0.5 ~ +80
1.5
–0.5 ~ VDD
80
1.5
1.47(P)/1.00(FP)
–40 ~ +85
–55 ~ +125
Unit
V
V
A
V
V
A
W
°C
°C
Apr. 2005