M63830P Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63830P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63830P/FP 4-channel sinkdriver, consists of 4 PNP
and 8 NPN transistors connected to from four high current
gain driver pairs.
FEATURES
G _{High breakdown voltage (BVCEO ≥ 50V)}
G _{High-current driving (IC(max) = 1.5A)}
G _{3V micro computer series compatible input}
G _{With clamping diodes}
G _{With input diode}
G _{Wide operating temperature range (Ta = –40 to +85°C)}
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
PIN CONFIGURATION
VCC 1
OUTPUT1 O1 2
INPUT1 IN1 3
4
GND
5
INPUT2 IN2 6
OUTPUT2 O2 7
VCC 8
16 COM COMMON
15 O4 OUTPUT4
14 IN4 INPUT4
13
GND
12
11 IN3 INPUT3
10 O3 OUTPUT3
9 COM COMMON
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
FUNCTION
The M63830FP/P is transistor-array of high active level four
units type which can do direct drive of 3 voltage microcom-
puter series. A resistor of 3.5kΩ is connected between the
input and the base of PNP transistors. A clamp diode for in-
ductive load transient suppression is connected for the out-
put pin (collector) and COM pin. The input diode is intended
to prevent the flow of current from the input to the Vcc. With-
out this diode, the current flows from “H” input to the Vcc and
the “L” input circuit is activated, in such a case where one of
the inputs of the 4 circuit is “H” and the other are “L” to save
power consumption. The diode is inserted to prevent such
mis-operation. The outputs are capable of driving 1.5A and
are rated for operation with output voltage up to 50V.
INPUT
22K
3.5K
760
5.5K 3K
VCC
COM
OUTPUT
GND
The four circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCC
VCEO
IC
VI
VR
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
IF
Clamping diode forward current
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Conditions
Output, H
Current per circuit output, L
Pulse width ≤ 10ms, duty cycle ≤ 5%
Pulse width ≤ 100ms, duty cycle ≤ 5%
Ta = 25°C, when mounted on board
Ratings
Unit
7
V
–0.5 ~ +50
V
1.5
A
–0.5 ~ VCC
V
50
V
1.5
A
1.0
1.92(P)/1.00(FP)
W
–40 ~ +85
°C
–55 ~ +125
°C
Sep. 2001