M63826P Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63826P, M63826FP and M63826GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63826P and M63826FP have the same pin connection as
M54526P and M54526FP. (Compatible with M54526P and
M54526FP) More over, the features of M63826P and
M63826FP are equal or superior to those of M54526P and
M54526FP.
FEATURES
q Three package configurations (P, FP and GP)
q Pin connection Compatible with M54526P and M54526FP
q High breakdown voltage (BVCEO ≥ 50V)
q High-current driving (IC(max) = 500mA)
q _{With clamping diodes}
q Driving available with PMOS IC output of 8-18V
q Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND 8
16 →O1
15 →O2
14 →O3
13 →O4 OUTPUT
12 →O5
11 →O6
10 →O7
9 →COM COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
CIRCUIT DIAGRAM
INPUT
10.5k
COM
OUTPUT
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63826P, M63826FP and M63826GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 10.5kΩ between input transistor bases
and input pins. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin (pin 9). The
output transistor emitters are all connected to the GND pin
(pin 8). The collector current is 500mA maximum. Collector-
emitter supply voltage is 50V maximum.The M63826FP and
M63826GP is enclosed in molded small flat package, en-
abling space-saving design.
7.2k
3k
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
–0.5 ~ +50
V
500
mA
–0.5 ~ +30
V
500
mA
50
V
1.47(P)/1.00(FP)/0.80(GP) W
–40 ~ +85
°C
–55 ~ +125
°C
Jan. 2000