M63824GP Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN
transistors connected to from seven high current gain driver
pairs.
FEATURES
q _{High breakdown voltage (BVCEO ≥ 50V)}
q _{High-current driving (IC(max) = 500mA)}
q _{With clamping diodes}
q _{3V micro computer series compatible input}
q _{Wide operating temperature range (Ta = –40 to +85°C)}
PIN CONFIGURATION
INPUT
IN1 1
IN2 2
IN3 3
IN4 4
IN5 5
IN6 6
IN7 7
GND 8
16 O1
15 O2
14 O3
13 O4 OUTPUT
12 O5
11 O6
10 O7
9 COM COMMON
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63824GP/KP is transistor-array of high active level
seven units type which can do direct drive of 3 voltage micro-
computer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient sup-
pression is connected for the output pin (collector) and COM
pin (pin9). All emitters of the output transistor are connected
to GND (pin8). The outputs are capable of driving 500mA
and are rated for operation with output voltage up to 50V.
16P2S-A(GP)
Package type 16P2Z-A(KP)
CIRCUIT DIAGRAM
INPUT
1.05K
COM
OUTPUT
7.2K
3K
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
–0.5 ~ +50
V
500
mA
–0.5 ~ +10
V
500
mA
50
V
0.80(GP)/0.6(KP)
W
–40 ~ +85
°C
–55 ~ +125
°C
Feb.2003