M63820FP Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63820FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN
transistors connected to from eight high current gain driver
pairs.
FEATURES
G _{High breakdown voltage (BVCEO ≥ 50V)}
G _{High-current driving (IC(max) = 500mA)}
G _{With clamping diodes}
G _{3V micro computer series compatible input}
G _{Wide operating temperature range (Ta = –40 to +85°C)}
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63820FP/KP is transistor-array of high active level
eight units type which can do direct drive of 3 voltage micro-
computer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient sup-
pression is connected for the output pin (collector) and COM
pin (pin11). All emitters of the output transistor are con-
nected to GND (pin10). The outputs are capable of driving
500mA and are rated for operation with output voltage up to
50V.
PIN CONFIGURATION
INPUT
NC 1
IN1 2
IN2 3
IN3 4
IN4 5
IN5 6
IN6 7
IN7 8
IN8 9
GND 10
20 NC
19 O1
18 O2
17 O3
16 O4
OUTPUT
15 O5
14 O6
13 O7
12 O8
11 COM COMMON
20P2N-A(FP)
Package type 20P2E-A(KP)
NC : No connection
CIRCUIT DIAGRAM
INPUT
1.05K
COM
OUTPUT
7.2K
3K
GND
The eight circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
–0.5 ~ +50
V
500
mA
–0.5 ~ +10
V
500
mA
50
V
1.10(GP)/0.68(KP)
W
–40 ~ +85
°C
–55 ~ +125
°C
Sep. 2001