M63815P Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE

PRELIMINARY _{NSootimcee: pTahrisamisentroict} ^{alimfinitaslasrpeescuifbicjeactitotno. change.}
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63815P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q _{Three package configurations (P, FP, and KP)}
q Medium breakdown voltage (BVCEO ≥ 35V)
q _{Synchronizing current (IC(max) = 300mA)}
q With clamping diodes
q With zener diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63815P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
PIN CONFIGURATION
IN1→ 1
IN2→ 2
IN3→ 3
INPUT
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ ⁸
GND 9
18 →O1
17 →O2
16 →O3
15 →O4
14 →O5
13 →O6
OUTPUT
12 →O7
11 →_O8
10 →COM COMMOM
Package type 18P4G(P)
NC 1
IN1→ 2
IN2→ 3
IN3→ 4
INPUT
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
GND ¹⁰
20 NC
19 →O1
18 ^→O2
17 →O3
16 →O4
15 →O5
14 →O6
OUTPUT
13 →O7
12 →O8
11 →COM COMMOM
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
Vz=7V
10.5K
10K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000