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M63807P Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 300mA TRANSISTOR ARRAY | |||
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63807P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63807P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q Medium breakdown voltage (BVCEO ⥠35V)
q Synchronizing current (IC(max) = 300mA)
q Low output saturation voltage
q Wide operating temperature range (Ta = â40 to +85°C)
PIN CONFIGURATION
INPUT
IN1â 1
IN2â 2
IN3â 3
IN4â 4
IN5â 5
IN6â 6
IN7â 7
IN8â 8
GND 9
18 âO1
17 âO2
16 âO3
15 âO4
14 âO5
13 âO6
12 âO7
11 âO8
10 âNC
OUTPUT
Package type 18P4G(P)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63807P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
NC 1
IN1â 2
IN2â 3
IN3â 4
INPUT
IN4â 5
IN5â 6
IN6â 7
IN7â 8
IN8â 9
GND 10
20 NC
19 âO1
18 âO2
17 âO3
16 âO4
15 âO5
14 âO6
13 âO7
12 âO8
11 âNC
OUTPUT
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
INPUT
10.5K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: â¦
Jan. 2000
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