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M63805P Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 300mA TRANSISTOR ARRAY | |||
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63805P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q Medium breakdown voltage (BVCEO ⥠35V)
q Synchronizing current (IC(max) = 300mA)
q With zener diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = â40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63805P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
PIN CONFIGURATION
INPUT
IN1â 1
IN2â 2
IN3â 3
IN4â 4
IN5â 5
IN6â 6
IN7â 7
IN8â 8
GND 9
18 âO1
17 âO2
16 âO3
15 âO4
14 âO5
13 âO6
12 âO7
11 âO8
10 âNC
OUTPUT
Package type 18P4G(P)
NC 1
IN1â 2
IN2â 3
IN3â 4
INPUT
IN4â 5
IN5â 6
IN6â 7
IN7â 8
IN8â 9
GND 10
20 NC
19 âO1
18 âO2
17 âO3
16 âO4
15 âO5
14 âO6
13 âO7
12 âO8
11 âNC
OUTPUT
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
INPUT
Vz=7V
10.5K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: â¦
Jan. 2000
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