M63804P Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 300mA TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63804P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63804P, M63804FP, M63804GP and M64804KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
q Four package configurations (P, FP, GP and KP)
q _{Medium breakdown voltage (BVCEO ≥ 35V)}
q Synchronizing current (IC(max) = 300mA)
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7^{→ 7}
16 → O1
15 → O2
14 → O3
13 ^→ O4
12 → O5
11 → O6
10 → O7
OUTPUT
GND ⁸
9 NC
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
Package type _{16P2Z-A(KP) NC : No connection}
CIRCUIT DIAGRAM
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
INPUT
10.5k
10k
OUTPUT
GND
FUNCTION
The M63804P, M63804FP, M63804GP and M63804KP each
have seven circuits consisting of NPN transistor. The transis-
tor emitters are all connected to the GND pin (pin 8)
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied
between the collector and emitter.
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
Parameter
Collector-emitter voltage
Collector current
Input voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63804P
M63804FP
M63804GP
M63804KP
Ratings
–0.5 ~ +35
300
–0.5 ~ +35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
W
°C
°C
Jan. 2000