M5M5V416CWG-70HI Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM

2000.11.22 Ver. 1.0
MITSUBISHI LSIs
M5M5V416CWG -70HI
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Those are summarized in the part name table below.
DESCRIPTION
FEATURES
The M5M5V416C is a f amily of low v oltage 4-Mbit static RAMs
organized as 262144-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.18µm CMOS technology .
The M5M5V416C is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V416CWG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It giv es the best solution f or
a compaction of m ounting area as well as f lexibility of wiring
pattern of printed circuit boards.
- Single 2.7~3.0V power supply
- Small stand-by current: 0.1µA (2.85V, ty p.)
- No clocks, No ref resh
- Data retention supply v oltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1, S2, BC1 and BC2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prev ents data contention in the I/O bus
- Process technology : 0.18µm CMOS
- Package: 48ball 7.0mm x 8.5mm CSP
Version,
Operating
temperature
Part name
Power
Supply
I-version _{M5M5V416CWG -70HI 2.7 ~ 3.0V}
-40 ~ +85°C
Access time
max.
70ns
Stand-by c urrent (Vcc=3.0V)
* Ty pical
Ratings (max.)
25°C 40°C 25°C 40°C 70°C 85°C
Activ e
current
Icc1
(3.0V, ty p.)
40mA
0.2 0.4 1
2 10 20
(10MHz)
5mA
(1MHz)
* Typical parameter indicates the value for the center
of distribution, and not 100% tested.
PIN CONFIGURATION
(TOP VIEW)
Outline: 48FJA
NC: No Connection
Pin
Function
A0 ~ A17 Address input
DQ1 ~ DQ16 Data input / output
S1
Chip select input 1
S2
Chip select input 2
W
Write control input
OE
Output enable input
BC1
BC2
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Vcc
Power supply
GND Ground supply
MITSUBISHI ELECTRIC
1