M5M5V216AWG Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM

revision-01, ' 98.12.08
M5M5V216AWG
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
FEATURES
The M5M5V216A is a family of low voltage 2-Mbit static RAMs
organized as 131,072-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.25µm CMOS technology.
The M5M5V216A is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5V216AWG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48pin)
and ball pitch of 0.75mm. It gives the best solution for a
compaction of mounting area as well as flexibility of wiring pattern
of printed circuit boards.
From the point of operating temperature, the family is divided
into three versions; "Standard", "W-version", and "I-version".
Those are summarized in the part name table below.
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,typ.)
No clocks, No refresh
Data retention supply voltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S , BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prevents data contention in the I/O bus
Process technology: 0.25µm CMOS
Package: 48 pin 7.0mm x8.5mm CSP
PART NAME TABLE
Version,
Operating
temperature
Part name
M5M5V216AWG -55L
Standard
0 ~ +70 C
M5M5V216AWG -70L
M5M5V216AWG -55H
M5M5V216AWG -70H
M5M5V216AWG -55LW
W-version
-20 ~ +85 C
M5M5V216AWG -70LW
M5M5V216AWG -55HW
M5M5V216AWG -70HW
M5M5V216AWG -55L I
I-version
-40 ~ +85 C
M5M5V216AWG -70L I
M5M5V216AWG -55H I
M5M5V216AWG -70H I
PIN CONFIGURATION
(TOP VIEW)
1 2 3456
A ^{BC1 OE A6 A3 A0 NC}
B
DQ
16
BC2
A7
A2
S
DQ
1
C
DQ DQ
14 15
A5
A1
DQ
2
DQ
3
D
GND
DQ
13
NC
A4
DQ
4
Vcc
E
Vcc
DQ
12
GND A16
DQ
5
GND
F
DQ DQ
11 10
A9
A14
DQ
7
DQ
6
G
DQ
9
NC
A10 A13
W
DQ
8
H NC A8 A11 A12 A15 NC
Power
Supply
Access
time
max.
Stand-by current Icc(PD), Vcc=3.0V
typical *
Ratings (max.)
25 C 40 C 25 C 40 C 70 C 85 C
Active
current
Icc1
(3.0V, typ.)
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V
--- ---
70ns(@ 2.7V) / 65ns(@3.3V)
--- --- 20µA ---
2.7 ~ 3.6V
2.7 ~ 3.6V
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
55ns(@ 2.7V) / 50ns(@3.3V)
70ns(@ 2.7V) / 65ns(@3.3V)
0.3µA 1µA
--- ---
1µA
---
3µA 8µA ---
45mA
--- _{20µA 50µA} (10MHz)
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V _{70ns(@ 2.7V) / 65ns(@3.3V)} 0.3µA 1µA
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V
--- ---
70ns(@ 2.7V) / 65ns(@3.3V)
1µA
---
3µA 8µA 24µA
--- _{20µA 50µA}
5mA
(1MHz)
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V
0.3µA 1µA
70ns(@ 2.7V) / 65ns(@3.3V)
1µA
3µA 8µA 24µA
* "typical" parameter is sampled, not 100% tested.
(BOTTOM VIEW)
65 4321
A ^{NC A0 A3 A6 OE BC1}
B
DQ
1
S
A2
A7
BC2
DQ
16
C
DQ DQ
32
A1
A5
DQ
15
DQ
14
D
Vcc
DQ
4
A4
NC
DQ
13
GND
E
GND
DQ
5
A16
GND
DQ
12
Vcc
F
DQ
6
DQ
7
A14 A9
DQ
10
DQ
11
G
DQ
8
W
A13 A10 NC
DQ
9
H NC A15 A12 A11 A8 NC
Pin
Function
A0 ~ A16 Address input
DQ1 ~ DQ16 Data input / output
S
Chip select input
W
Write control input
OE
Output inable input
BC1 ^{Lower Byte (DQ1 ~ 8)}
BC2 ^{Upper Byte (DQ9 ~ 16)}
Vcc
Power supply
GND Ground supply
Outline: 48FJA
NC: No Connection
MITSUBISHI ELECTRIC
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