M5M54R04AJ-10 Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – 4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM

1998.11.30 Ver.B
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
MITSUBISHI LSIs
M5M54R04AJ-10,-12,-15
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
The M5M54R04AJ is a family of 1048576-word by 4-bit
static RAMs, fabricated with the high performance CMOS
silicon gate process and designed for high speed
application.
These devices operate on a single 3.3V supply, and are
directly TTL compatible. They include a power down
feature as well.
FEATURES
•Fast access time
M5M54R04AJ-10 ... 10ns(max)
M5M54R04AJ-12 ... 12ns(max)
M5M54R04AJ-15 ... 15ns(max)
•Single +3.3V power supply
•Fully static operation : No clocks, No refresh
•Common data I/O
•Easy memory expansion by S
•Three-state outputs : OR-tie capability
•OE prevents data contention in the I/O bus
•Directly TTL compatible : All inputs and outputs
A0 1
A1 2
aindpduretsss
A2 3
A3 4
chip select
input
A4 5
S6
data inputs/
outputs_(3.3V)
DQ1
VCC
7
8
(0V) _{GND 9}
data inputs/
outputs
DQ2 ¹⁰
write control W 11
input
A5 12
A6 13
address
inputs
A7 14
A8 15
A9 ¹⁶
Outline
32 A19
31 A18
30 A17
29 A16
aindpduretsss
28 A15
27 _OE
output enable
input
26 DQ4 data inputs/
25 GND (0V) ^outputs
24 _VCC (3.3V)
23 DQ3
22 A14
data inputs/
outputs
21 A13
20 A12
19 A11
address
inputs
18 A10
17 NC
32P0K(SOJ)
APPLICATION
High-speed memory units
BLOCK DIAGRAM
PACKAGE
M5M54R04AJ
: 32pin 400mil SOJ
adress
inputs
A0 ₁
A1 2
A2 ₃
A3 4
A4 5
A5 ₁₂
A6 ₁₃
A7 ₁₄
A8 ₁₅
A9 16
MEMORY ARRAY
1024 ROWS
4096 COLUMNS
7 DQ1
10 DQ2
23 DQ3
26 DQ4
data
inputs/
outputs
S6
W 11
OE 27
COLUMN I/O CIRCUITS
COLUMN ADDRESS
DECODERS
COLUMN INPUT BUFFERS
8
VCC (3.3V)
24
9
GND(0V)
25
18 19 20 21 22 28 29 30 31 32
A10 A11 A12 A13 A14 A15 A16 A17 A18 A19
address inputs
MITSUBISHI
ELECTRIC
1