M5M51016BTP-12VLL-I Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

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--1122VVLLLL--II
11004488557766--BBIITT((6655553366--WWOORRDD BBYY 1166--BBIITT))CCMMOOSS SSTTAATTIICC RRAAMM
DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM
organized as 65536 word by 16-bit which are fabricated using
high-performance triple polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery result in a high
density and low power static RAM.
They are low stand-by current and low operation current and ideal
for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small
outline package which is a high reliability and high density surface
mount device (SMD). Two types of devices are available.
M5M51016BTP(normal lead bend type package), M5M51016BRT
(reverse lead bend type package). Using both types of devices, it
becomes very easy to design a printed circuit board.
FEATURES
Type name
Access time
(max)
M5M51016BTP,RT-12VL 120ns
M5M51016BTP,RT-12VLL 120ns
Power supply current
Active
(max)
stand-by
(max)
120µA
(VCC = 3.6V)
12mA
(1MHz)
24µA
(VCC = 3.6V)
0.3µA
(VCC = 3.0V,
typ)
Single +3.0V power supply
Low stand-by current 0.3É A (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by CS, BC1 & BC2
Data hold on +2V power supply
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51016BTP,RT ^{..............................} 44pin 400mil TSOP(II)
APPLICATION
Small capacity memory units
PIN CONFIGURATION (TOP VIEW)
NC 1
A12 2
A7 3
A6 4
A5 5
ADDRESS
INPUTS
A4
6
A3 7
A2 8
A1 9
A0 10
CHIP SELECT
INPUT
CS
11
(0V)GND 12
OUTPUT ENABLE
INPUT
OE
13
NC 14
DQ1 15
DQ2 16
DQ3 17
DATA DQ4 18
INPUTS/
OUTPUTS DQ5 19
DQ6 20
DQ7 21
DQ8 22
44 NC
43 BC1
42 BC2
BYTE
CONTROL
INPUTS
41 _A14
40 A15
39 _A13
38 W
37 A8
ADDRESS
INPUTS
WRITE
CONTROL
INPUTS
36 _A9
35 A11
ADDRESS
INPUTS
34 A10
33 GND(0V)
32 _NC
31 _DQ16
30 _DQ15
29 _DQ14
28 _DQ13
27 _DQ12
DATA
INPUTS/
OUTPUTS
26 _DQ11
25 _DQ10
24 _DQ9
23 VCC(5V)
Outline 44P3W - H (400mil TSOP Normal Bend)
NC 44
BYTE BC1 43
CONTROL
INPUTS BC2 42
A14 41
ADDRESS
INPUTS
A15
40
WRITE ^{A13 39}
CONTROL W 38
INPUTS
A8 37
ADDRESS ^{A9 36}
INPUTS _{A11 35}
A10 34
(0V)GND 33
DATA
INPUTS/
OUTPUTS
NC 32
DQ16 31
DQ15 30
DQ14 29
DQ13 28
DQ12 27
DQ11 26
DQ10 25
DQ9 24
(5V)VCC ²³
1 _NC
2 A12
3 A7
4 A6
5 A5
6 A4
7 A3
ADDRESS
INPUTS
8 A2
9 A1
10 A0
11
CS
CHIP SELECT
INPUT
12 GND(0V)
13
OE
OUTPUT ENABLE
INPUT
14 NC
15 _DQ1
16 _DQ2
17 DQ3
18 _DQ4
19 _DQ5
DATA
INPUTS/
OUTPUTS
20 DQ6
21 _DQ7
22 DQ8
Outline 44P3W - J (400mil TSOP Reverse Bend)
NC : NO CONNECTION
MITSUBISHI
ELECTRIC
1