M5M29GB160BVP Datasheet, PDF (1/25 Pages) Mitsubishi Electric Semiconductor – 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

MITSUBISHI LSIs
M5M29GB/T160BVP-80
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for
mobile and personal computing, and communication products. The M5M29GB/T160BVP are fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in in 48pin TSOP(I) .
FEATURES
Organization
.................................1048,576 word x 16bit
................................._{2,097,152 word x 8 bit}
Supply voltage ............................................................. VCC = 2.7~3.6V
Access time
.............................. _{80ns (Vcc=3.3V+/-0.3V)}
90ns (Vcc=2.7~3.6V)
Power Dissipation
Read
.................................
54 mW (Max. at 5MHz)
(After Automatic Power saving) ^.......... 0.33mW (typ.)
Program/Erase
Standby
..................................................................^102.633m_m^WW
(Max.)
(typ.)
Deep power down mode ^{.......................} 0.33mW (typ.)
Auto program for Bank(I)
Program Time ^{.................................}4ms (typ.)
Program Unit
(Byte Program)
(Page Program)
.................................................._{11w28owrdo/1rdb/y2t5e6byte}
Auto program for Bank(II)
Program Time ^{.................................}4ms (typ.)
Program Unit ^{.................................} 128word/256byte
Auto Erase
Erase time
................................. _{40 ms (typ.)}
Erase Unit
Bank(I)
Bank(II)
PBMaoaroiantmBBellotoeccrkkBl_.o_...c^...k_{..................................................311266KKKwwwooorrrddd///633422KKKbbbyyyttteee}
x
x
x
1
7
28
.........................................
Program/Erase cycles
100Kcycles
Boot Block
M5M29GB160BVP ^{........................} Bottom Boot
M5M29GT160BVP ^{........................} Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Package
48-Lead, 12mm x 20mm TSOP (type-I)
APPLICATION
Code Strage
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine
PIN CONFIGURATION (TOP VIEW)
160BVP
A15
1
A14
2
A13
3
A12
4
A11
5
A10
6
A9
7
A8
8
A19
9
NC
10
WE#
11
RP#
12
NC
13
WP#
14
RY/BY# 15
A18
16
A17
17
A7
18
A6
19
A5
20
A4
21
A3
22
A2
23
A1
24
M5M29GB/T
160BVP
160BVP
48
A16
47 BYTE#
46 GND
45
DQ15/A-1
44
DQ7
43
DQ14
42
DQ6
41
DQ13
40
DQ5
39
DQ12
38
DQ4
37
VCC
36
DQ11
35
DQ3
34
DQ10
33
DQ2
32
DQ9
31
DQ1
30
DQ8
29
DQ0
28 _OE#
27 _GND
26 _CE#
25
A0
Outline 48pin TSOP type-I (12 X 20mm)
VP(Normal bend)
NC : NO CONNECTION
1
Sep 1999. Rev2.0